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data sheet high sensitivity micropower omnipolar hall-eff ect switch ah9248 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 1 general description the ah9248 is an ultra-sensitive hall-effect switch with digital latched output, mainly designed for battery-operation, hand-held equipments. special cmos process is used for low-voltage and low-power requirement. a chopper stabilized amplifier improves stability of magnetic switch points. a sleep-awake logic controls the ic in sleep time or awake time. this function will reduce the average operating current of the ic. during the awake time, the output is changed with the magnetic flux density. during the sleep time, the output is latched in its previous state and the current consumption will reduce to some a. the ic switching behaviour is omnipolar, either north or south pole sufficient strength will turn the output on. if the magnetic flux density is larger than operating point (b op ), the output will be turned on; if it is less than releasing point (b rp ), the output will be turned off. the ah9248 is available in to-92s-3, sot-23-3 and dfn-22-3 packages which are optimized for most applications. features ? micropower operation ? 2.5 to 5.5v power supply ? switching for both poles of a magnet (omnipolar) ? stabilized chopper ? superior temperature stability ? digital output signal ? built-in pull-up resistor (ah9249) applications ? cover switch in notebook pc/pda ? handheld wireless app lication awake switch ? magnet switch in low duty cycle applications figure 1. package types of ah9248 to-92s-3 sot-23-3 dfn-22-3
data sheet high sensitivity micropower omnipolar hall-eff ect switch ah9248 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 2 1 2 3 vcc gnd output 3 2 1 vcc gnd output pin configuration z3 package n package (to-92s-3) (sot-23-3) (front view) (top view) dn package (dfn-22-3) (top view) figure 2. pin configuration of ah9248 pin description pin number to-92s-3 sot-23-3 dfn-2 2-3 pin name function 1 1 1 vcc power supply pin 2 3 3 gnd ground pin 3 2 2 output output pin pin 1 dot by marking 3 2 1 vcc output gnd
data sheet high sensitivity micropower omnipolar hall-eff ect switch ah9248 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 3 functional block diagram a (b) a for to-92s-3 b for sot-23-3 and dfn-22-3 figure 3. functional block diagram of ah9248
data sheet high sensitivity micropower omnipolar hall-eff ect switch ah9248 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 4 ordering information ah9248 - package temperature range part nu mber marking id packing type ah9248z3-g1 9248 bulk to-92s-3 ah9248z3tr-g1 9248 ammo sot-23-3 ah9248ntr-g1 gl1 tape & reel dfn-22-3 -40 to 85 c ah9248dntr-g1 ja tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. blank: bulk tr: tape and reel or ammo g1: green circuit type package z3: to-92s-3 n: sot-23-3 dn: dfn-22-3
data sheet high sensitivity micropower omnipolar hall-eff ect switch ah9248 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 5 absolute maximum ratings (t a =25 c, note 1) parameter symbol value unit supply voltage v cc 7 v supply current (fault) i cc 6 ma output voltage v out 7 v output current i out 2 ma magnetic flux density b unlimited gauss to-92s-3 400 sot-23-3 230 power dissipation p d dfn-22-3 230 mw storage temperature t stg -55 to 150 c junction temperature t j 150 c esd (machine model) (note 2) esd 200 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. note 2: electronic semiconductor products are sensitive to electro static discharge (esd). always observe electro static discharge control procedures whenever handling semiconductor products. recommended operating conditions parameter symbol min max unit supply voltage v cc 2.5 5.5 v operating temperature t op -40 85 c
data sheet high sensitivity micropower omnipolar hall-eff ect switch ah9248 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 6 electrical characteristics v cc =3v, t a =25c, unless otherwise specified. parameter symbol conditions min typ max unit supply voltage v cc operating 2.5 3 5.5 v i aw awake 2 4 ma i sl sleep 6 10 a supply current i av g average 10 15 a output current i out 1.0 ma output leakage current i leak b< b rp <0.1 1 a saturation voltage v sat i out =1.0ma 0.4 v awake mode time t aw operating 150 s sleep mode time t sl operating 90 120 ms duty cycle d 0.15 % chopper frequency f c 15 khz magnetic characteristics (note 3) v cc =3v, t a =25c, unless otherwise specified. parameter symbol conditions min typ max unit b ops south pole to branded side b>b ops ,v out =low(output on) 30 55 gauss operating point b opn north pole to branded side b>b opn ,v out =low(output on) -55 -30 gauss b rps south pole to branded side b data sheet high sensitivity micropower omnipolar hall-eff ect switch ah9248 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 7 magnetic characteristics (continued) output voltage figure 4. output voltage vs. magnetic flux density test conditions figure 5. average supply current (note 5, 6) note 5: i cc represents the average supply current. output is open during measurement. note 6: the device is put under magnetic field with b data sheet high sensitivity micropower omnipolar hall-eff ect switch ah9248 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 8 test conditions (continued) figure 6. output saturation voltage (note 7, 8) note 7: the output saturation voltage v sat is measured at v cc =2.5v and v cc =5.5v. note 8: the device is put under magnetic field with b>b op . figure 7. magnetic thresholds (note 9, 10) note 9: b op is determined by putting the device under magnetic field swept from b rp(min) to b op(max) until the output is switched on. note 10: b rp is determined by putting the device under magnetic field swept from b op(max) to b rp(min) until the output is switched off.
data sheet high sensitivity micropower omnipolar hall-eff ect switch ah9248 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 9 -40-30-20-10 0 1020304050607080 -50 -40 -30 -20 -10 0 10 20 30 40 50 b op1 b op2 b rp1 b rp2 b op /b rp (gs) t a ( o c) 2.50 2.75 3.00 3.25 3.50 -50 -40 -30 -20 -10 0 10 20 30 40 50 t a =25 o c b op /b rp (gs) v cc (v) b op1 b op2 b rp1 b rp2 2.50 2.75 3.00 3.25 3.50 6 7 8 9 10 11 12 13 14 15 t a =25 o c i avg ( a) v cc (v) 2.50 2.75 3.00 3.25 3.50 0 50 100 150 200 250 300 t a =25 o c t aw ( s) v cc (v) typical performance characteristics figure 8. b op /b rp vs. supply voltage figure 9. b op /b rp vs. ambient temperature figure 10. average supply current vs. supply voltage figure 11. awake mode time vs. supply voltage
data sheet high sensitivity micropower omnipolar hall-eff ect switch ah9248 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 10 2.50 2.75 3.00 3.25 3.50 50 60 70 80 90 100 110 120 t a =25 o c t sl (ms) v cc (v) 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 450 p d (mw) t a ( o c) to-92s-3 sot-23-3/dfn-2x2-3 typical performance characteristics (continued) figure 12. sleep mode time vs. supply voltage figure 13. power dissipation vs. ambient temperature
data sheet high sensitivity micropower omnipolar hall-eff ect switch ah9248 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 11 typical application figure 14. typical application of ah9248
data sheet high sensitivity micropower omnipolar hall-eff ect switch ah9248 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 12 mechanical dimensions to-92s-3 unit: mm(inch)
data sheet high sensitivity micropower omnipolar hall-eff ect switch ah9248 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 13 mechanical dimensions (continued) sot-23-3 unit: mm(inch) 2.820(0.111) 3.020(0.119) 2.650(0.104) 2.950(0.116) 0.950(0.037) typ 0.300(0.012) 0.500(0.020) 1.500(0.059) 1.700(0.067) 1.800(0.071) 2.000(0.079) 0.300(0.012) 0.600(0.024) 0.100(0.004) 0.200(0.008) 0.000(0.000) 0.150(0.006) 0.900(0.035) 1.300(0.051) 1.450(0.057) max. 0.200(0.008) 0 8 0.900(0.035) typ 1.45(0.057) typ
data sheet high sensitivity micropower omnipolar hall-eff ect switch ah9248 jul. 2011 rev. 1. 6 bcd semiconductor manufacturing limited 14 mechanical dimensions (continued) dfn-2 2-3 unit: mm(inch) 1.900(0.075) 2.100(0.083) 1.900(0.075) 2.100(0.083) package sensor location (for hall ic) 0.850(0.033) 1.150(0.045) 0.990(0.039) 1.290(0.051) 0.650(0.026) typ 0.200(0.008) min. 1.220(0.048) 1.420(0.056) 0.780(0.031) 0.980(0.039) 0.300(0.012) 0.500(0.020) n3 n2 n1 pin 1 dot by marking 0.700(0.028) 0.800(0.031) 0.180(0.007) 0.300(0.012) 0.203(0.008) ref 0.000(0.000) 0.050(0.002)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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